Method of making a semiconductor laser

Details Method of making a semiconductor laser Method of making a semiconductor laser

1990-10-10

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437130, 437133, 148DIG72, 148DIG95, H01L 2120

Patent

active

050791850

ABSTRACT:
A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by placing a liquid-phase solvent.

REFERENCES:
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patent: 4734385 (1988-03-01), Mihashi et al.
patent: 4782035 (1988-11-01), Fujiwara
patent: 4829023 (1989-05-01), Nagai et al.
patent: 4847857 (1989-07-01), Ohkura
patent: 4855250 (1989-08-01), Yamamoto et al.
Luo et al., "Fabrication and . . . Laser Diode", . . . Conference on Solid State Devices . . . , Tokyo, 1988, pp. 327-330.
Takigawa et al., "Continuous Room-Temperature . . . Laser", Applied Physics Letters, 51 (20), 1987, pp. 1580-1581.

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