Method of making a semiconductor integrated circuit device utili

Details Method of making a semiconductor integrated circuit device utili Method of making a semiconductor integrated circuit device utili

1978-02-15

1979-10-09

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29577R, 29578, 148190, 148191, 357 48, 357 63, 357 89, 357 90, 357 92, H01L 2120, H01L 2174

Patent

active

041705017

ABSTRACT:
A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

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Nuttall, R., "Dependence on Deposition. . . Epitaxial Silicon Layers", J. Electrochem. Soc., vol. 111, No. 3, Mar. 1964, pp. 317-323.
Regh et al., "Preparation of Substrate. . .Integrated Circuits", I.B.M. Tech. Discl. Bull., vol. 13, No. 4, 1970, p. 924.
Chin et al., "Integrated Circuit. . . Silicon Devices", I.B.M. Tech. Discl. Bull., vol. 16, No. 6, Nov. 1973, pp. 1985-1986.
Wolf, Semiconductors (Textbook), Wiley, New York, N. Y., 1971, p. 31.

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