Method of making a semiconductor integrated circuit device havin

Details Method of making a semiconductor integrated circuit device havin Method of making a semiconductor integrated circuit device havin

1993-02-01

1994-12-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 46, 437173, 437919, 437 60, 148DIG138, H01L 2170

Patent

active

053729625

ABSTRACT:
A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an anodizing technique, an anodic oxidation, a wet etching and a dry etching so that a surface of the lower electrode becomes porous, thereby increasing the capacitance.

REFERENCES:
patent: 5068199 (1991-11-01), Sandhu
patent: 5082797 (1992-01-01), Chan et al.
patent: 5112773 (1992-05-01), Tuttle
patent: 5134086 (1992-07-01), Ahn
patent: 5138841 (1992-08-01), Sandhu
patent: 5227322 (1993-07-01), Ko et al.
patent: 5234857 (1993-08-01), Kim et al.
Patent Abstracts of Japan, vol. 16, No. 73, 21 Feb. 1992.
Patent Abstracts of Japan, vol. 15, No. 359, 11 Sep. 1991.

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