Method of making a semiconductor integrated circuit device havin

Details Method of making a semiconductor integrated circuit device havin Method of making a semiconductor integrated circuit device havin

1989-07-31

1991-02-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437918, 437 31, 437 34, H01L 2700

Patent

active

049904612

ABSTRACT:
A semiconductor integrated circuit device having resistance elements having reduced fluctuation of their resistance values and a fabrication method thereof are disclosed.
More definitely, a protective film made of a gate electrode material of MISFETs formed on the main plane of a semiconductor substrate is disposed through an insulator film on the upper surface of the resistance elements comprising a semiconductor region which is formed by introducing an impurity of a first conductivity type into the main plane of the same semiconductor substrate.

REFERENCES:
patent: 4208781 (1980-01-01), Rao
patent: 4256515 (1981-03-01), Miles
patent: 4367580 (1983-01-01), Guterman
patent: 4370798 (1983-02-01), Lien
patent: 4734382 (1988-03-01), Krishna
patent: 4800171 (1989-01-01), Ivanmesh
Nikkei Electronics, Mar. 10, 1986 pp. 199-217.
Nikkei Electronics, Aug. 12, 1985, pp. 187-195.

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