Method of making a semiconductor-insulator-semiconductor structu

Details Method of making a semiconductor-insulator-semiconductor structu Method of making a semiconductor-insulator-semiconductor structu

1988-10-31

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG56, 148DIG72, 148DIG97, 156612, 437 84, 437126, 437107, 437939, 437976, H01L 2120

Patent

active

049353829

ABSTRACT:
A semiconductor epitaxial device structure is described in which there are alternate single crystal layers of semiconductor, insulator and semiconductor. A typical example is InP/CaF.sub.2 /InP. A process for producing such a structure is also described.

REFERENCES:
patent: 3915765 (1975-10-01), Cho et al.
patent: 4555301 (1985-11-01), Gibson et al.
patent: 4792832 (1988-12-01), Baba et al.
Sikos et al., "GaAs/(Ca,Sr)F.sub.2 /(001)GaAs Lattice-Matched Structures Grown by Molecular Beam Epitaxy", Appl. Phys. Lett., 44(12), Jun. 15, 1984, pp. 1146-1148.
Tu et al., "Epitaxial InP/Fluoride/InP (001) Double Heterostructures Grown by Molecular Beam Epitaxy", Appl. Phys. Lett., 43(6), Sep. 15, 1983, pp. 569-571.
Siskas et al., "Epitaxial Growth of Lattice-Matched Ca.sub.x Sr.sub.1-x F.sub.2 on (100) and (110) GaAs Substrates", J. Appl. Phys., 56(6), Sep. 15, 1989, pp. 1642-1646.

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