Method of making a semiconductor image sensor device

Details Method of making a semiconductor image sensor device Method of making a semiconductor image sensor device

1994-10-18

1996-11-19

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 47, 437 60, 437101, 437 21, 437 41, H01L 2714, H01L 2701, H01L 21336, H01L 2171

Patent

active

055762220

ABSTRACT:
An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

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