Method of making a semiconductor film where the hydrogen and/or

Details Method of making a semiconductor film where the hydrogen and/or Method of making a semiconductor film where the hydrogen and/or

1992-01-31

1993-08-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437108, 437109, H01L 21265

Patent

active

052348431

ABSTRACT:
Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.

REFERENCES:
H. A. Atwater, et al "Ion-bombardment-enhanced grain growth in germanium, silicon, and gold thin films" J. Appl. Phys 64 (5), Sep. 1, 1988, pp. 2337-2353.

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