Method of making a semiconductor element

Details Method of making a semiconductor element Method of making a semiconductor element

2007-12-05

2009-11-03

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S386000, C438S396000, C438S401000, C438S692000, C438S756000, C257SE21008, C257SE21009, C257SE21012, C257SE21021, C257SE21274

Reexamination Certificate

active

07611958

ABSTRACT:
A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode defining the recess, the element having a first surface exterior of the recess; forming a dielectric layer on the element, the dielectric layer oriented against the first surface of the element and against the walls of the element within the recess; polishing off at least a portion of the dielectric layer oriented against the first surface of the element to electrically isolate the portion of the dielectric layer located in the recess from any portion of the dielectric layer remaining outside the recess; and producing a second electrode, the second electrode oriented at least partially within the recess with the dielectric layer oriented between the first electrode and the second electrode.

REFERENCES:
patent: 6518142 (2003-02-01), Yamamoto
patent: 6528838 (2003-03-01), Ng et al.
patent: 6964908 (2005-11-01), Hsu et al.
patent: 7115467 (2006-10-01), Ajmera et al.
patent: 2002/0081814 (2002-06-01), Ning
patent: 2002/0155676 (2002-10-01), Stetter et al.
patent: 2003/0001188 (2003-01-01), Nakagawa
patent: 2004/0056324 (2004-03-01), Ning et al.
patent: 2004/0102014 (2004-05-01), Ning et al.
patent: 2007/0200197 (2007-08-01), Torres et al.

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