Method of making a semiconductor diode

Details Method of making a semiconductor diode Method of making a semiconductor diode

1989-12-26

1990-12-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437147, 437154, 437158, 437904, 148DIG106, 148DIG174, 357 73, 357 56, H01L 2122

Patent

active

049786369

ABSTRACT:
High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150.degree. C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon, covered by a TEOS CVD glass, a CVD nitride and a further TEOS CVD glass. Multiple Zener voltages are obtained with otherwise identical, simultaneous wafer processing steps by using epi-wafers having different epi doping and thickness. Back-side for wafer thinning is avoided.

REFERENCES:
patent: 3341377 (1967-09-01), Wacker
patent: 3576684 (1971-04-01), Mehta et al.
patent: 3586548 (1971-06-01), Pommerrenig
patent: 3798082 (1974-03-01), Schwartz
patent: 3886004 (1975-05-01), Bruchez
patent: 4006046 (1977-02-01), Pravin
patent: 4879254 (1989-11-01), Tsuzuki et al.

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