Method of making a semiconductor device with sidewall etch stopp

Details Method of making a semiconductor device with sidewall etch stopp Method of making a semiconductor device with sidewall etch stopp

1995-06-05

1996-08-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, H01L 2144

Patent

active

055433600

ABSTRACT:
An amorphous silicon layer is formed on the side wall of a first wiring layer having a predetermined wiring width and formed in a predetermined shape by patterning. A silicon oxide layer is covering the first wiring layer and the amorphous silicon layer, and a through-hole is formed in the silicon oxide layer so that a portion of the first wiring layer is exposed. A tungsten layer is filling the through-hole, and a second wiring layer connected to the tungsten layer is formed on the silicon oxide layer.

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