Method of making a semiconductor device with exposure of...

Details Method of making a semiconductor device with exposure of... Method of making a semiconductor device with exposure of...

2005-10-11

2005-10-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C117S105000, C117S108000, C438S479000

Reexamination Certificate

active

06953703

ABSTRACT:
An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.

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