Method of making a semiconductor device with conductors on stepp

Details Method of making a semiconductor device with conductors on stepp Method of making a semiconductor device with conductors on stepp

1995-03-01

1997-02-11

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 60, 437225, 437228, H01L 21265, H01L 2170, H01L 2700, H01L 21465

Patent

active

056020503

ABSTRACT:
An element separating oxide film is formed on a P-type semiconductor substrate by means of a selective oxidation method, and then a gate oxide film is formed on the element separating oxide film by a thermal oxidation method. A gate electrode film made of an N-type polysilicon material is formed so as to extend along a step portion of the element separating oxide film on the semiconductor substrate. The upper surface of the gate electrode film is flattened by means of a surface polishing method. Then, isotropic etching is performed by using a resist pattern as a mask, thereby forming a gate electrode. Since in the method the upper surface of the gate electrode film in the flattened, the semiconductor substrate is prevented from being subject to over-etching when a gage electrode is formed, so that the changes of characteristics of MOS transistors are prevented whose gate insulative films have been becoming thinner as their elements have been finer.

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