Method of making a semiconductor device with buried electrode

Fishing – trapping – and vermin destroying

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437245, H01L 21331

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active

053648021

ABSTRACT:
A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

REFERENCES:
patent: 4086694 (1978-05-01), U
patent: 4780425 (1988-10-01), Tabata
patent: 5213999 (1993-05-01), Sparks et al.
patent: 5270224 (1993-12-01), Furumura et al.

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