Method of making a semiconductor device with a seal

Details Method of making a semiconductor device with a seal Method of making a semiconductor device with a seal

1981-08-17

1983-04-19

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, H01L 2302

Patent

active

043801153

ABSTRACT:
A seal for a semiconductor device in which the semiconductor has a major surface with a metal layer overlying the major surface. An insulating layer of glass is formed on the metal layer and a passive sealing silicon layer is formed on the glass layer for protecting the device from contamination.

REFERENCES:
patent: 3325586 (1967-06-01), Suddick
patent: 3383568 (1968-05-01), Cunningham
patent: 3710204 (1973-01-01), Batz
Abbas et al.; "Doped Polycrystalline Field Shield Process", IBM Tech. Disclosure; vol. 15, No. 6; Nov. 1972.

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