Fishing – trapping – and vermin destroying
Patent
1993-05-18
1995-01-03
Thomas, Tom
Fishing, trapping, and vermin destroying
437 52, 437 60, 437238, 437919, H01L 2170
Patent
active
053786459
ABSTRACT:
A method of manufacturing a semiconductor device having a capacitor comprises the steps of forming a silicon oxide layer on a semiconductor substrate, forming a first silicon nitride layer on the silicon oxide layer, forming a polycrystalline silicon layer as a lower electrode layer of the capacitor on the first silicon nitride layer, subjecting the polycrystalline silicon layer to the natural outside atmosphere so as to form a native oxide layer on the polycrystalline silicon layer, removing the native oxide layer to expose the polycrystalline silicon layer to an inactive gas atmosphere, Forming a second silicon nitride layer on the exposed polycrystalline silicon layer subjecting the second silicon nitride layer to the outside atmosphere so as to form a capacitor oxide layer on the polycrystalline silicon layer, the second silicon nitride layer and the capacitor oxide layer working as a dielectric layer of the capacitor, and forming an upper electrode layer of the capacitor on the capacitor oxide layer.
REFERENCES:
patent: 4438157 (1984-03-01), Romano-Moran
patent: 5032545 (1991-07-01), Doan et al.
patent: 5104819 (1992-04-01), Freiberger et al.
Inoue Nobuhiko
Yoshimaru Masaki
OKI Electric Industry Co., Ltd.
Rabin Steven M.
Thomas Tom
LandOfFree
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