Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1995-03-03
1997-09-16
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 47, 438767, H01L 2120
Patent
active
056680481
ABSTRACT:
A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane, wherein is a real number of about 1.ltoreq.n, and epitaxially growing the group III-V compounds semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.
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Anayama Chikashi
Kondo Makoto
Shoji Hajime
Breneman R. Bruce
Fujitsu Limited
Paladugu Ramamohan Rao
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