Method of making a semiconductor device using photoresist flow

Details Method of making a semiconductor device using photoresist flow Method of making a semiconductor device using photoresist flow

1994-02-16

1995-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437229, 437909, 1566591, 257327, H01L 21265, H01L 21312, H01L 21475

Patent

active

053957814

ABSTRACT:
A process used during the formation of a semiconductor device comprises the formation of a stack having a substrate, a layer of oxide, a polycrystalline silicon layer, and a photoresist mask. An etch is performed to pattern the polycrystalline silicon layer, then the photoresist is flowed to cover the edges of the polycrystalline silicon. Finally, a doping step is performed using the flowed photoresist as a doping barrier, thus allowing for a distance between the poly and an implanted region in the substrate.

REFERENCES:
patent: 4755479 (1988-07-01), Miura
patent: 5175122 (1992-12-01), Wang et al.
patent: 5234852 (1993-08-01), Liou

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