Method of making a semiconductor device to improve conductivity

Details Method of making a semiconductor device to improve conductivity Method of making a semiconductor device to improve conductivity

1983-01-07

1984-09-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 91, 427 86, H01L 21263, H01L 2126

Patent

active

044722109

ABSTRACT:
In making a semiconductor device wherein a film of a non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate and then doped, particularly by ion implantation, to make the film conductive, the conductivity of the film is increased by pre-annealing the film at a temperature of 1000.degree. C. to 1200.degree. C. in an inert ambient before doping the film.

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Lee, J. Electrochem Soc. 129 (Jul. 1982) 1604.
Kishino et al., Appl. Phys. Letts. 32 (1978) 1.
Andrews, J. M., Jour. Electronics Materials 8 (1979) 227.
Tsuchimoto et al. in Ion Impl'n in Semiconductors Ed. S. Namba, Plenum, N.Y. 1975, p. 605.
Kamins, J. Electrochem. Soc. 127 (1980) 666.

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