Method of making a semiconductor device operating in high freque

Details Method of making a semiconductor device operating in high freque Method of making a semiconductor device operating in high freque

1990-04-24

1991-04-23

Hearn, Brain E.

Fishing, trapping, and vermin destroying

437 51, 437180, 437209, H01L 2160, H01L 2166

Patent

active

050100190

ABSTRACT:
A semiconductor device operating in a high frequency range is formed in structure capable of facilitating and highly accurate frequency characteristic test. A semiconductor substrate (1) is provided on a major surface with an input electrode pad (2a) and an output electrode pad (2b) to be connected with integrated circuits included in the semiconductor substrate (1) respectively, while grounding electrode pads (2c) are formed each with paired grounding lines disposed on both sides of the input and output electrode pads (2a, 2b), respectively, to sandwich the same. The grounding electrode pads (2c) ground the semiconductor substrate (1) in a high frequency characteristic test. The input electrode pad (2a) and the grounding lines of the grounding electrode pads (2c) on both sides thereof as well as the output electrode pad (2b) and the corresponding grounding lines of the grounding electrode pads (2c) on both sides thereof are positioned to be placed in contact with a probing needle of a well-known high frequency wafer probe during a high frequency characteristic test.

REFERENCES:
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patent: 4283733 (1981-08-01), Aomura
patent: 4566184 (1986-01-01), Higgins et al.
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Microwave System News, "Precise MMIC Parameters Yielded by 18 GHz Water Probe," by K. R. Greason et al., May, 1983, pp. 55-65.
Microwave System News, "Microwaver Wafer Probing Achieves On-Water Measurements Through 18 GHz" by. D. E. Lariton et al., May 1985, pp. 99-115.
"Design Considerations for Monolithic Microwave Circuits" by Pucel, R. A., 8099 IEEE Trans. on Microwave Theory & Techniques, vol. MTT-29 (1981), Jun. N 6, New York, USA.

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