Method of making a semiconductor device including via holes

Details Method of making a semiconductor device including via holes Method of making a semiconductor device including via holes

1989-07-06

1991-08-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437974, 148DIG135, 357 55, H01L 2100, H01L 2102, H01L 2980, H01L 2944

Patent

active

050377825

ABSTRACT:
A semiconductor substrate having first and second opposing surfaces is provided with a plurality of semiconductor elements having their electrodes arranged on the first surface. A plurality of small recesses are first formed in the second surface at locations opposite selected ones of the electrodes of the semiconductor elements. After the formation of the small recesses, the material of the substrate in and around the small recesses is etched away so that a larger recess encompassing the small recesses is formed and, at the same time, the small recesses are caused to extend through the substrate to thereby form through-holes which extend from the larger recess to the selected ones of the electrodes.

REFERENCES:
patent: 4707726 (1987-11-01), Tinder
patent: 4733195 (1988-03-01), Tserng
patent: 4751562 (1988-06-01), Yamamura
patent: 4794093 (1988-12-01), Tong et al.
patent: 4800420 (1989-01-01), Chen et al.
patent: 4807022 (1989-02-01), Kazior et al.
Mitsui, K., "Via-Hole Structured GaAs High Output Monolithic Amplifier," 1983, Nat. Conf. of Semi and Mat., IEEE, p. 122.
Hirachi, Y., "a Packaged 20-GHZ 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure," IEEE Trans. Micro Theory & Tech, vol. MTT-32, No. 3, Mar. 3, 1984, pp. 309-316.
Hirachi, Y., a Novel Via Hole PHS Structure in K-Band Powers GaAs FET, IEEE, New York, U.S.A., pp. 676-679, 1981, Int. Elect. Dev. Meeting.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device including via holes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device including via holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device including via holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1986884