Fishing – trapping – and vermin destroying
Patent
1992-01-08
1993-07-20
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 31, 437 6, 257758, H01L 21265
Patent
active
052293130
ABSTRACT:
Disclosed herein is such multilayer electrode structure of transistor and thyristor that a second electrode region serving as an upper layer electrode region is formed on a second semiconductor region which is an active region and an insulating film which is formed on a first electrode region serving as an underlayer electrode region, whereby the second electrode region is directly in contact with the second semiconductor region for electrical connection. According to such electrode structure, the second electrode region is also formed on the insulating film while being in stable electrical connection with the second semiconductor region even if the same is formed by vacuum deposition. Thus, it is possible to obtain a semiconductor device having multilayer structure, which can be fabricated at a low cost and is excellent in electrode forming area efficiency.
REFERENCES:
patent: 3931674 (1976-01-01), Amelio
patent: 4283733 (1981-08-01), Amura
patent: 4646125 (1987-02-01), Takagi
patent: 4691221 (1987-09-01), Herberg
patent: 4817322 (1989-05-01), Takata
patent: 4994880 (1991-02-01), Kato et al.
Japanese Patent Laying Opening Gazette-62-143453 (date unknown).
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Pham Long
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