Method of making a semiconductor device having improved contacts

Details Method of making a semiconductor device having improved contacts Method of making a semiconductor device having improved contacts

1997-02-03

1998-10-27

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438620, 438637, 438631, H01L 218242

Patent

active

058277706

ABSTRACT:
A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; an overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.

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