Method of making a semiconductor device having a short gate leng

Details Method of making a semiconductor device having a short gate leng Method of making a semiconductor device having a short gate leng

1994-04-26

1995-01-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437228, 437241, 437912, 437947, 437981, 437978, 156653, 156657, H01L 21335, H01L 2131

Patent

active

053842731

ABSTRACT:
A semiconductor device having a short gate length is fabricated. The short gate length is obtained by utilizing the fact that an unannealed silicon nitride can be isotropically etched while not etching an annealed silicon nitride layer. The method comprises forming a first silicon nitride 13 on a semiconductor material 10, annealing layer 13, forming an insulating layer 15, a second silicon nitride layer 17 and a masking layer 19, undercutting a portion of layers 17 and 15, removing the masking layer, annealing the second silicon nitride 17, implanting to form channel region 20 having portions 21 and 22, undercutting a portion of the insulating layer 15, removing the second silicon nitride 17 and the first silicon nitride 13 not covered by layer 15, forming gate 23 having effective gate length 30 and source/drain 25/26.

REFERENCES:
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patent: 4994872 (1991-02-01), Nishizawa et al.
patent: 5110751 (1992-05-01), Nakagawa
patent: 5281839 (1994-01-01), Cambou et al.
A. Hartstein et al., "A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length." Journal of Applied Physics, 68 (5), 1 Sep. 1990, pp. 2493-2495.

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