Method of making a semiconductor device having a planarized surf

Stock material or miscellaneous articles – All metal or with adjacent metals – Having member which crosses the plane of another member

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438599, 438622, 438624, 438645, 438646, 438697, H01L 2144

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058406190

ABSTRACT:
An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.

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