Method of making a semiconductor device having a low permittivit

Details Method of making a semiconductor device having a low permittivit Method of making a semiconductor device having a low permittivit

1995-03-16

1997-01-07

Bowers, Jr,, Charles L.

Fishing, trapping, and vermin destroying

437231, 437235, 427384, 430313, H01L 213105

Patent

active

055916767

ABSTRACT:
A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14') . The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18') .

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