Method of making a semiconductor device having a gate all around

Details Method of making a semiconductor device having a gate all around Method of making a semiconductor device having a gate all around

1995-04-20

1996-11-26

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 21, 437927, H01L 21786

Patent

active

055785131

ABSTRACT:
A method of manufacturing a semiconductor device including forming an insulating film on a substrate; forming an opening in the insulating film by anisotropic etching; embedding a dummy member in the opening; forming a channel member over the insulating film and the dummy member; removing the dummy member to form a gap in the opening between the channel member and the substrate; and forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.

REFERENCES:
patent: 5120666 (1992-06-01), Gotou
patent: 5188973 (1993-02-01), Omura et al.
Colinge et al, "Silicon-On-Insulator `Gate-All-Around Device`", Electron Devices Society of IEEE, Dec. 1990, pp. 25.4.1-25.4.4.

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