Method of making a semiconductor device having a capacitive laye

Details Method of making a semiconductor device having a capacitive laye Method of making a semiconductor device having a capacitive laye

1995-06-07

1997-06-03

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

H01L 2170, H01L 2700

Patent

active

056354207

ABSTRACT:
A method for making ferroelectric thin film form capacitors that maintains the insulating characteristics of the thin film capacitors formed on the semiconductor devices while reducing the leakage current and ensuring a yield sufficient for applications to ULSIs such as DRAMs. A metal or oxide thereof, which contains structural elements of a metal forming the ferroelectric thin film, is formed as islands in the initial stage of formation or during the formation of a ferroelectric thin film in semiconductor devices. This suppresses the formation of columnar crystals.

REFERENCES:
patent: 5043049 (1991-08-01), Takenaka
patent: 5081559 (1992-01-01), Fazan et al.
patent: 5122923 (1992-06-01), Matsubara et al.

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