Method of making a semiconductor device having a...

Details Method of making a semiconductor device having a... Method of making a semiconductor device having a...

2007-10-11

2010-06-08

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S085000, C438S754000, C257SE29100, C257SE29117

Reexamination Certificate

active

07732251

ABSTRACT:
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

REFERENCES:
patent: 3294660 (1966-12-01), Kingery et al
patent: 5289016 (1994-02-01), Noguchi
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 6362499 (2002-03-01), Moise et al.
patent: 6391462 (2002-05-01), Jang
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 2002/0171085 (2002-11-01), Suzawa et al.
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0068581 (2003-04-01), Kawamura et al.
patent: 2003/0111663 (2003-06-01), Yagi
patent: 2003/0218221 (2003-11-01), Wager, III et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 2005/0017244 (2005-01-01), Hoffman et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 11134811 (2001-09-01), None
patent: 1 443 130 (2004-08-01), None
patent: 2003086808 (2003-03-01), None
patent: WO 97/06544 (1997-02-01), None
patent: WO 03/040441 (2003-05-01), None
Aoki, Akira, et al., “Tin Oxide Thin Film Transistors”, Japan J. Appl. Phys., vol. 9, p. 582 (1970).
Carcia, P.F., et al., “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering”, Applied Physics Letters, vol. 82, No. 7, pp. 1117-1119 (Feb. 17, 2003).
Carcia, P.F., et al., “ZnO Thin Film Transistors for Flexible Electronics”, Mat. Res. Soc. Symp. Proc., vol. 769, pp. H72.1-H72.6 (2003).
U.S. Appl. No. 60/490,239, filed Jul. 25, 2003.
U.S. Appl. No. 10/763,353, filed Jan. 23, 2004.
U.S. Appl. No. 10/763,354, filed Jan. 23, 2004.
Fu, Shelton, et al., “MOS and MOSFET with Transistion Metal Oxides”, SPIE vol. 2697, pp. 520-527.
Giesbers, J.B., et al., “Dry Etching of All-Oxide Transparent Thin Film Memory Transistors”, Microeletronic Engineering, vol. 35, pp. 71-74 (1997).
Grosse-Holz, K.O., et al. “Semiconductive Behavior of Sb Doped SnO2 Thin Films”, Mat. Res. Soc. Symp. Proc., vol. 401, pp. 67-72 (1996).
Hoffman, R.L., et al., “ZnO-based transparent thin-film transistors”, Applied Physics Letters, vol. 82, No. 5, pp. 733-735 (Feb. 3, 2003).
Masuda, Satoshi, et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, Journal of Applied Physics, vol. 93, No. 3, pp. 1624-1630 (Feb. 1, 2003).
Nishi, Junya, et al., “High Mobility Thin Film Transistors with Transparent ZnO Channels”, Jpn. J. Appl. Phys., vol. 42, Part 2, No. 4A, pp. L347-L349 (Apr. 2003).
Ohya, Yutaka, et al., “Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition”, Jpn. J. Appl. Phys., vol. 40, Part 1, No. 1, pp. 297-298 (Jan. 2001).
Pallecchi, Ilaria, et al. “SrTIO3-based metal-insulator-semiconductor heterostructures” Applied Physics Letters, vol. 78, No. 15, pp. 2244-2246 (Apr. 9, 2001).
Prins, M. W. J., et al., “A ferroelectric transparent thin-film transistor”, Appl. Phys. Lett., vol. 68, No. 25, pp. 3650-3652 (Jun. 17, 1996).
Seager, C.H., et al., “Charge Trapping and device behavior in ferroelectric memories”, Appl. Phys. Lett., vol. 68, No. 19, pp. 2660-2662 (May 6, 1996).
Uneno, K., et al. “Field-effect transistor on SrTiO3 with sputtered AI2O3 gate insulator”, Applied Physics Letters, vol. 83, No. 9, pp. 1755-1757 (Sep. 1, 2003).
Wöllenstein, Jürgen, et al., “An insulated gate thin-film transistor using SnO2 as semiconducting channel, a possible new gas sensor device” The 11th European Conference on Solid State Transducers, pp. 417-474 (Sep. 21-24, 1997).
Yoshida, A., “Three Terminal Field Effect Superconducting Device Using SrTiO3 Channel” IEEE Transactions on Applied Superconductivity, vol. 5, No. 2, pp. 2892-2895 (Jun. 1995).
Solid-State Electronics, vol. 7, Pergamon Press, Notes pp. 701-702 (1964).
Anonymous, “Transparent and/or memory thin film transistors in LCD's and PLEAD—” Research Disclosure, p. 890 (Jul. 1998).
Proceedings of the IEEE, Proceedings Letters, Nov. 1968, pp. 2094-2095.
Extended abstracts of the 2000 International Conference on Solid State Devices and Materials; Aug. 29-31, 2000, Sendai Intl Center, pp. 128-129.
OHTOMO, “Novel Semiconductor Technologies of ZnO Films towards . . . ”, IEICE Trans. Electron., vol. E83-C, No. 10, Oct. 2000, pp. 1614-1617.
Ohta, H., “Frontier of transparent oxide semiconductors”; Solid State Electronic,V.47(12) , Dec. 2003, pp. 2261-2267.
Miniami, “Transparent and conductive multicomponent oxide films” Jrnl of Vac Sci & Tech . V17(4), Jul. 1999.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device having a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4221016