Method of making a semiconductor device comprising isolation...

Details Method of making a semiconductor device comprising isolation... Method of making a semiconductor device comprising isolation...

2007-04-12

2009-06-16

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S425000, C438S429000, C438S508000

Reexamination Certificate

active

07547610

ABSTRACT:
By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions.

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PCT International Search Report and Written Opinion from PCT/US2007/020598, dated Jun. 12, 2008.

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