Method of making a semiconductor device by forming a nanochannel

Details Method of making a semiconductor device by forming a nanochannel Method of making a semiconductor device by forming a nanochannel

1992-06-12

1994-07-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437107, 148DIG106, H01L 21263

Patent

active

053326814

ABSTRACT:
The present invention provides a method for depositing a pattern of deposd material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern and which have an average diameter of less than 1 micron; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass mask into or onto the substrate. The present invention also provides semiconductor devices made by this method.

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