Method of making a semiconductor device by dry etching process

Details Method of making a semiconductor device by dry etching process Method of making a semiconductor device by dry etching process

1992-08-11

1994-05-31

Kunemund, Robert

Fishing, trapping, and vermin destroying

437231, 156643, H01L 21465

Patent

active

053169808

ABSTRACT:
In a method for making a semiconductor device, an insulating film, which is composed of a silicon oxide film and an organic spin-on glass film, is formed on a semiconductor substrate having a step-like part. The insulating film is thereafter etched back with a dry etching process and is thereby planarized. As an etching gas, a mixture of at least one of fluorocarbon types of gases and at least one of hydrofluorocarbon types of gases is used. An insulating film having a high planarity is thereby obtained.

REFERENCES:
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4676867 (1987-06-01), Elkins et al.
"IEEE Transactions on Semiconductor Manufacturing", vol. 1, No. 4, Nov. 1988, New York, pp. 154-156, P. E. Riley, et al.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device by dry etching process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device by dry etching process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device by dry etching process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1627992