Method of making a semiconductor device adapted to remove...

Details Method of making a semiconductor device adapted to remove... Method of making a semiconductor device adapted to remove...

2007-09-11

2007-09-11

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S693000, C257S725000, C257S773000, C257S784000, C257S786000, C257SE21499

Reexamination Certificate

active

11249569

ABSTRACT:
What is invented is a semiconductor device (10) comprising a pellet (12) having a ground electrode (18), an outside signal terminal (15) connected to the pellet (12), so as to receive signal which is likely to include noise. Therein, said outside signal terminal (15) is surrounded with a ground terminal (17) connected to said ground electrode (18) in at least a half periphery.

REFERENCES:
patent: 5849606 (1998-12-01), Kikuchi et al.
patent: 2003/0157587 (2003-08-01), Gomez et al.
patent: 2003/0179549 (2003-09-01), Zhong et al.
patent: 7-45746 (1995-02-01), None
patent: 9-148489 (1997-06-01), None
patent: 2001-118948 (2001-04-01), None
patent: 2001-292026 (2001-10-01), None
patent: 2002-043468 (2002-02-01), None
patent: 2002-198466 (2002-07-01), None
patent: 2001-210743 (2002-08-01), None
patent: 2002-314028 (2002-10-01), None

Affiliated with

Also associated with

Rating

Method of making a semiconductor device adapted to remove... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device adapted to remove..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device adapted to remove... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3729389