Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1976-11-04

1977-12-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 148187, 148190, H01L 21225

Patent

active

040639738

ABSTRACT:
A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. The device is then heated at a high temperature, thus causing the impurities to diffuse into the semiconductor substrate and form impurity diffused regions. Suitable electrodes are deposited on the impurity diffused regions.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3502517 (1970-03-01), Sussmann
patent: 3664896 (1972-05-01), Duncan
patent: 3694276 (1972-09-01), Wakamiya et al.
patent: 3764413 (1973-01-01), Kakizaki et al.
patent: 3915767 (1975-10-01), Welliver
patent: 3928095 (1975-12-01), Harigaya et al.
Fair, J. of Electrochem. Soc., vol. 119, No. 10, Oct. 1972, pp. 1389-1394.
Takagi et al., J. of the Japan Soc. of Applied Physics, vol. 42, 1973, pp. 101-109.

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