Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1994-08-09

1995-10-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437127, 148DIG99, H01L 2100

Patent

active

054590825

ABSTRACT:
A semiconductor device and a method of making the same capable of simplifying the process of making and reducing the cost of making. In the method a first layer is formed which has a plurality of conductors at its edge portion. Thereafter, a second layer is formed on the first layer which is to be selectively etched to form a pattern. During the etching, current is detected from the conductors and the etching is stopped dependent on the current detected from the conductors. The semiconductor device includes a transparent electrode on a substrate the transparent electrode having protrusions which have a top surface. A first insulation layer exists between the protrusions. There is a color emitting layer on the top surfaces of the protrusions and the insulation layer.
The method includes the steps of:

REFERENCES:
patent: 4358338 (1992-11-01), Downey et al.
patent: 4767496 (1988-08-01), Hieber
patent: 4810335 (1989-03-01), Hieber
patent: 4902631 (1990-02-01), Downey et al.
patent: 5198072 (1993-03-01), Gabriel
Thin Film Electroluminescent Phosphors for Patterned Full-Color Displays (Springer proceedings in physics, vol. 38), (1989), pp. 132-138.

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