Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1976-08-27

1978-01-10

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 29591, 427 91, 156656, 156657, 156659, B01J 1700

Patent

active

040671003

ABSTRACT:
A method of making a semiconductor device which has sharp corners on an upper surface and wherein a passivation layer is formed over said surface and windows are formed in the passivation layer for the attaching and formation of electrodes in which a photoresist material is placed over the passivation layer and selectively removed so as to leave areas of photoresist at locations over said passivation layer wherein electrodes are to be formed after which a layer of metal is formed over the surface and the metal and photoresist is removed at those portions where the photoresist layer remained after which passivation the area is etched through the windows in the metal layer and the metal layer is then removed and the electrodes are formed in the windows.

REFERENCES:
patent: 3287612 (1966-11-01), Lepselter
patent: 3858304 (1975-01-01), Leedy

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