Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1988-12-16

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 99, 437909, 437917, 148DIG11, 357 35, H01L 2136

Patent

active

049353756

ABSTRACT:
A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided to delimit the monocrystalline Si semiconductor structures to prevent undesired current flow, for example between two monocrystalline devices of an integrated circuit. The polycrystalline silicon of the barrier regions has a substantially lower electrical conductivity than the monocrystalline regions, and consequently it is possible to spatially selectively dope portions the barrier region so as to provide regions which electrically contact a monocrystalline silicon region. In a preferred embodiment a polycrystalline silicon region within the barrier region is doped so that it forms a pn-junction with the adjacent monocrystalline semiconductor region and can be used, for example, as an emitter zone of a bipolar device.

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