Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1995-12-13

1997-11-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 35, 437 24, 437DIG959, 148DIG84, H01L 2144

Patent

active

056839375

ABSTRACT:
A semiconductor device includes a rectangular semiconductor chip having a main surface, a stripe-form semiconductor element forming portion formed in parallel to one of sides of the semiconductor chip to cross the main surface, a first groove portion formed along one of sides of the semiconductor element forming portion in a longitudinal direction, a second groove portion formed along the other side of the semiconductor element forming portion in the longitudinal direction, the second groove portion including a hollow space which is enlarged in substantially a central portion, a surface electrode formed on at least part of an upper portion of the semiconductor element forming portion, an external lead connecting terminal electrode formed in the hollow space, a wiring formed on part of a bottom surface and a side surface, which is adjacent to stripe-form portion, of the second groove portion, for electrically connecting the surface electrode with the terminal electrode, a first dummy electrode formed at least on the main surface of the semiconductor chip to face the semiconductor element forming portion with the first groove portion disposed therebetween, and a second dummy electrode formed on the main surface of the semiconductor chip to face the semiconductor element forming portion with the second groove portion disposed therebetween.

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G. Du et al., Ohmic Heating and Series Resistance of a Vertical-Microcavity Surface-emitting Laser, Jul. 15, 1991, 265-267, Applied Physics Letters, vol. 59, No. 3, New York.

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