Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1975-04-24

1976-09-14

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156 17, H01L 21225

Patent

active

039805077

ABSTRACT:
Portions of a polycrystalline silicon layer disposed on an insulator are removed after diffusing donor impurities into and through the regions to be removed. The regions to be retained are either previously or simultaneously doped with acceptor impurities. The method provides improved control of the size and the shape of the edges of the retained regions.

REFERENCES:
patent: 3160539 (1964-12-01), Hall et al.
patent: 3675319 (1972-07-01), Smith
patent: 3738880 (1973-06-01), Laker
patent: 3830665 (1974-08-01), Roman et al.
patent: 3846198 (1974-11-01), Wen et al.
patent: 3847687 (1974-11-01), Davidsohn
Greenwood, "Ethylene Diamine-Catechol-Water Mixture --etc.," J. Electrochem. Soc., vol. 116, No. 9, Sept. 1969, pp. 1325, 1326.

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