Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1975-08-04

1977-08-30

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, H01L 754, H01L 21265

Patent

active

040452506

ABSTRACT:
A method of making a semiconductor device which has regions of differing type and/or degree of conductivity includes the use of a multi-layer masking coating on selected regions of a body of semiconductor, and a mono-layer masking coating on other selected regions. Ion implantation together with chemical diffusion is used with a single photoresist mask to create regions of both relatively high and relatively low conductivity of one type. A second photoresist mask may be used with ion implantation and chemical diffusion to produce regions of opposite type conductivity with differing degrees of conductivity.

REFERENCES:
patent: 3756861 (1973-09-01), Payne et al.
patent: 3767492 (1973-10-01), MacRae et al.
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 3793090 (1974-02-01), Barile et al.

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