Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1994-08-04

1996-04-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437 89, 437919, H01L 218242

Patent

active

055061630

ABSTRACT:
In a method of manufacturing a DRAM by using a laminate SOI technique, which makes it possible to form a thin semiconductor film of a uniform thickness, the method includes steps of forming a step portion on a major surface of a silicon substrate, forming an insulating film on the major surface of the silicon substrate, forming a capacitor which is connected to the step potion through a contact hole formed through the insulating film on the step portion, grinding the silicon substrate from the other major surface thereof after a support substrate is laminated onto the silicon substrate to remain the step portion, forming a thin silicon film on the insulating film by lateral epitaxial growth process based on the silicon of the remaining step portion serving as a seed for the lateral epitaxial growth, and forming a MOS transistor in the thin silicon film.

REFERENCES:
patent: 4549926 (1985-10-01), Corboy, Jr. et al.
patent: 4971925 (1990-11-01), Alexander et al.
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5102819 (1992-04-01), Matsushita
patent: 5183783 (1993-02-01), Ohta et al.

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