Method of making a semiconductive structure useful as a pressure

Details Method of making a semiconductive structure useful as a pressure Method of making a semiconductive structure useful as a pressure

1990-03-27

1991-02-19

Woodiel, Donald O.

Metal working

Method of mechanical manufacture

Electrical device making

73727, 156651, 156357, 156662, 338 4, G01L 708, G01L 906

Patent

active

049931431

ABSTRACT:
A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.

REFERENCES:
patent: 4766666 (1988-08-01), Sugiyama et al.
patent: 4771638 (1988-09-01), Sugiyama et al.
patent: 4823605 (1989-04-01), Stein
patent: 4945769 (1990-08-01), Sidner et al.

Affiliated with

Also associated with

Rating

Method of making a semiconductive structure useful as a pressure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductive structure useful as a pressure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductive structure useful as a pressure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1133194