Metal treatment – Compositions – Heat treating
Patent
1982-03-15
1984-02-28
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148187, 357 23, 357 91, H01L 21265, H01L 734
Patent
active
044340133
ABSTRACT:
A semi-conductor structure and particulrly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed.
REFERENCES:
patent: 4243433 (1981-01-01), Gibbons
patent: 4338139 (1982-07-01), Shinada
patent: 4364778 (1982-12-01), Leamy et al.
Koyanagi et al. Appl. Phys. Letts. 35 (1979) 621.
Hess et al., In Laser and Electron Beam Interactions with Solids, ed. Appleton et al, Elsevier, N.Y. 1982 p. 633.
Iwamatsu et al., Electronics Letts., 15 (1979) 827.
Roy Upendra
Xerox Corporation
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