Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2006-06-02
2009-06-16
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C257S042000, C257S170000, C257S484000, C257S605000, C257SE29196
Reexamination Certificate
active
07547586
ABSTRACT:
A method of making a semiconductor structure for use in a static induction transistor. Three layers of a SiC material are on a substrate with the top layer covered with a thick oxide. A mask having a plurality of strips is deposited on the top of the oxide to protect the area underneath it, and an etch removes the oxide, the third layer and a small amount of the second layer, leaving a plurality of pillars. An oxidation step grows an oxide skirt around the base of each pillar and consumes the edge portions of the third layer under the oxide to form a source. An ion implantation forms gate regions between the skirts. At the same time, a plurality of guard rings is formed. Removal of all oxide results in a semiconductor structure to which source, gate and drain connections may be made to form a static induction transistor. A greater separation between a source and gate is obtained by placing a spacer layer on the sidewalls of the pillars, either before or after formation of the skirt.
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International Search Report issued Nov. 27, 2007 in counterpart foreign application in WIPO under application No. PCT/US07/12802.
Andrews & Kurth LLP
Coleman W. David
McCall-Shepard Sonya D
Northrop Grumman Corp
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