Method of making a self-aligned bipolar transistor with composit

Details Method of making a self-aligned bipolar transistor with composit Method of making a self-aligned bipolar transistor with composit

1986-02-20

1988-05-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 50, 437147, 437158, 437979, 437984, 437962, 437924, 357 34, 357546H, 357 59K, 357 59, 148102, 148106, 148116, 148124, B01J 1700, H01L 2126, H01L 21225

Patent

active

047450800

ABSTRACT:
A fully self-aligned polycrystalline silicon emitter bipolar transistor. Self-alignment of the p.sup.+ base contact (12) is achieved by using oxidized sidewalls (8) (sidewall spacers) of the emitter mesa (7) as part of the p.sup.+ base contact implantation mask. Collector contact (13) alignment can be achieved using oxidized sidewalls (17) of polycrystalline silicon alignment mesas (14) defined in the same polysilicon as the emitter mesa (7) but deposited on oxide (2) rather than the implanted base region (5).

REFERENCES:
patent: 3481030 (1969-12-01), Te Velde et al.
patent: 4188707 (1980-02-01), Asano et al.
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4377903 (1983-03-01), Kanzaki et al.
patent: 4486766 (1984-12-01), Shannon
patent: 4503603 (1985-03-01), Blossfeld
patent: 4509250 (1985-04-01), Blossfeld
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4550490 (1985-11-01), Blossfeld
patent: 4554729 (1985-11-01), Tanimura et al.

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