Method of making a selective compositional disordering of a GaAs

Details Method of making a selective compositional disordering of a GaAs Method of making a selective compositional disordering of a GaAs

1993-05-10

1994-09-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437129, 437132, 437133, 437126, H01L 2120

Patent

active

053468562

ABSTRACT:
A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal germanium layer is epitaxially deposited on the superlattice substrate. A layer of gold is deposited on the germanium layer. The gold and germanium layers are imagewise patterned and selected portions etched away. The patterned substrate is encapsulated in a compatible, heat resistant encapsulating material. The encapsulated substrate is then annealed at a temperature of up to about 350.degree. C.

REFERENCES:
patent: 4824798 (1989-04-01), Burnham et al.
patent: 5013684 (1991-05-01), Epler et al.
patent: 5121067 (1992-06-01), Marsland
Deppe et al, "Atom Diffusion and Impurity-Induced Layer Disordering in Quum Well III-V Semiconductor Heterostructures", J. Appl. Phys. 64(12), Dec. 1988.
W. D. Laidig, et al, Appl. Phys. Lett. 38, 776 (1981) in disorder of an AlAs-GaAs SL by impurity diffusion.

Affiliated with

Also associated with

Rating

Method of making a selective compositional disordering of a GaAs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a selective compositional disordering of a GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a selective compositional disordering of a GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1120212