Method of making a Schottky diode with sub-minimum guard ring

Details Method of making a Schottky diode with sub-minimum guard ring Method of making a Schottky diode with sub-minimum guard ring

1998-01-20

2000-08-01

Fahmy, Wael

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including diode

438353, 438942, 257409, H01L 218222

Patent

active

060966181

ABSTRACT:
The invention is a method of fabricating a self-aligned, sub-minimum guard ring for a Schottky diode device wherein the sub-minimum guard ring is positioned at the inside edges of adjacent isolation structures and is self-aligned to the intrinsic base implanted regions. In this particular invention, illustrating the guard ring fabrication technique, an improved Schottky diode is fabricated at minimum groundrules which utilizes a frequency-doubling resist and an appropriate mask to provide the implant mask for a p- or n-type guard ring. This shallow implant near the surface prepares a guard ring that minimizes the electric field at the interface where the deposited metal or silicide joins the STI structure. Additional ion implants with energies greater than and less than the guard ring implantation energy may be deposited to tailor the substrate surface and reduce the parasitic capacitance of the diode.

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