Method of making a Schottky barrier field effect transistor

Details Method of making a Schottky barrier field effect transistor Method of making a Schottky barrier field effect transistor

1979-04-27

1981-05-12

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29579, 29589, 29591, H01L 2128

Patent

active

042663334

ABSTRACT:
A Schottky barrier field effect transistor is made by coating the surface of a body of semiconductor material with a metal layer having good ohmic contact with the semiconductor material and defining the metal layer to form spaced source and drain contacts. A relatively thick layer of an insulating material such as silicon oxide or silicon nitride, is coated over the source and drain contacts and the exposed portions of the surface of the semiconductor material between the source and drain contacts. Using a photoresist mask, an opening is etched through the insulating layer to the surface of the semiconductor material over the space between the source and drain contacts with the opening being etched back slightly from the edges of the photoresist mask. Using the photoresist mask as a deposition mask, a metal film is deposited through the opening in the insulating layer onto the exposed surface of the semiconductor material to form the gate. After removing the photomask, a metal contact is plated on the gate to substantially fill the opening in the insulating layer.

REFERENCES:
patent: 3866310 (1975-02-01), Driver
patent: 3961414 (1976-06-01), Humphreys
patent: 4075651 (1978-02-01), James
patent: 4104672 (1978-08-01), DiLorenzo et al.
patent: 4107720 (1978-08-01), Pucel

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