Method of making a ruggedized high current density cathode

Details Method of making a ruggedized high current density cathode Method of making a ruggedized high current density cathode

1979-06-25

1980-12-02

Lazarus, Richard B.

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

29 2517, H01J 912

Patent

active

042362873

ABSTRACT:
A high current density cathode capable of operating at current densities of A/cm.sup.2 to 30A/cm.sup.2 in the temperature range of 900 degrees C. to 1125 degrees C. is prepared by machining a porous high purity tungsten pellet containing copper in its pores and also containing about 0.6 to 2 weight percent of an activator to the desired cathode shape without reducing the pores of the emitter pellet. The pellet is then fired at 1800 degrees C. in a non-oxidizing atmosphere to remove the copper filler material. The pellet is then impregnated with Ba.sub.5 Sr(WO.sub.6)2 at a temperature of 1900 degrees C. in a dry inert gas atmosphere and the impregnated emitter then fired in dry hydrogen atmosphere at about 1840 degrees C. for about 2.5 to 5 minutes.

REFERENCES:
patent: 2945150 (1960-07-01), DeSantis et al.
patent: 3076916 (1963-02-01), Koppius
patent: 3118080 (1964-01-01), Koppius
patent: 3303559 (1967-02-01), Holtzclaw
patent: 3525135 (1970-08-01), Bondley
patent: 3971110 (1976-07-01), Thomas et al.

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