Method of making a rugged DMOS device

Details Method of making a rugged DMOS device Method of making a rugged DMOS device

1993-05-12

1995-03-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 51, 437154, H01L 21335

Patent

active

053957768

ABSTRACT:
A method of making a doubly-diffused MOS (DMOS) device that can tolerate higher drain dV/dt before latch-up occurs. At least some of the immediately adjacent multiple body regions in the DMOS device are interconnected at the corners thereof by the formation of P-conductivity regions. These regions reduce parasitic bipolar effects and facilitate collection of excess carriers in the device that causes latch-up under high dV/dt conditions and reduced avalanche energy tolerance.

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