Method of making a rim-type phase-shift mask

Details Method of making a rim-type phase-shift mask Method of making a rim-type phase-shift mask

1995-01-25

1996-01-16

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430312, 430313, G03F 900

Patent

active

054846722

ABSTRACT:
A method of forming rim type phase-shift lithography mask (140) involving backside overexposure of a positive resist layer (130) overlying a patterned light-blocking layer (120). By subjecting the resist layer to electromagnetic radiation (132) (e.g., broad band UV) transmitted via the backside (115) of the mask substrate (112), portions (134) of the resist layer extending from peripheral edges of the light blocking layer inwardly a selected distance are activated. After developing activated portions of the resist layer, the "pull back" of the resist layer is transferred to the underlying light blocking layer by anisotropically etching portions of the light blocking layer not covered by the resist layer, thereby forming the desired rim structure.

REFERENCES:
patent: 3676002 (1972-07-01), Moreau et al.
patent: 4895790 (1990-01-01), Swanson et al.
patent: 4948706 (1990-08-01), Sugihara et al.
patent: 5045417 (1991-09-01), Okamoto
Nitayama et al., "New Phase Shifting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithography," IEDM IEEE 1989, pp. 3.3.1-3.3.4.
Todokoro et al., "Self-Aligned Phase Shifting Mask for Contact Hole Fabrication," Microelectronic Engineering, 1991, pp. 131-134, No. 13.
Ishiwata et al., "Fabrication of Phase-Shifting Mask," Proceedings of the SPIE, vol. 1463, pp. 423-433, 1991.
"Self-Aligned Phase Shifting Mask for Contact Hole Fabrication," Y. Tokokoro et al., Microelectronic Engineering, Mar. 1991, No. 1/4, pp. 131-134.

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